Parrameters | Unit | Min. | Max. | |
| Operating Temperature | ℃ | -40 | 85 | |
| Laser Forward Current | mA | -- | 120 | |
| Laser Reverse Bias | V | -- | 2 | |
| Storage Temperature* | ℃ | -40 | 100 | |
Note: *Non condensation on chip. | ||||
| Parameter | Symbol | Test Conditions | Min. | Typical | Max. | Unit |
| Operating Temperature | T | -- | -40 | -- | 85 | ℃ |
| Threshold Current | ITH | T=25℃ | -- | 6 | 10 | mA |
| T=85℃ | -- | 25 | 35 | |||
| Operating Current | IOP | CW,Po=5.0mW, T=25℃ | -- | 20 | 25 | mA |
| CW,Po=5.0mW, T=85℃ | -- | 60 | 80 | |||
| Optical Output Power | PO | CW | 8 | -- | -- | mW |
| Slope Efficiency | SE | T=25°C | 0.28 | -- | -- | mW/mA |
| T=85°C | 0.15 | -- | -- | |||
| Forward Voltage | VF | Po=5.0mW | -- | 1.2 | 1.6 | V |
| Center Wavelength | λc | Po=5.0mW,T=25°C | See Options | 1470 1490 1510 1530 1550 1570 1590 1610 | See Options | nm |
| Wavelength Temp Coefficient | dλ/dT | -- | -- | 0.1 | 0.12 | nm/℃ |
| SpectralWidth(-20dB) | dλ | -- | 0.1 | 1.0 | nm | |
| Side Mode Supp Ratio | SMSR | Po=5.0mW | 38 | 45 | -- | dB |
| Rise Time | TR | Ppeak= 5.0mW, 20% to 80% | -- | -- | 100 | ps |
| Fall Time | TF | -- | -- | 100 | ps | |
| Far field(Vertical) | ɵv | -- | 25 | 28 | 31 | degrees |
| Far field(Horizontal) | ɵh | -- | 17 | 20 | 31 | degrees |
| Relaxation Oscillation Frequency | FR | Po=5.0mW | 6 | -- | -- | GHz |
Example: E-470-A-02-R3-8-280-T means electroabsorption modulated laser chip, wavelength1467nm~1473nm, 2.5Gbs, working temperature -40*C to 85'℃, Minimum Slope 0.28@25°C, thepacking method Chip on tape.
Supports 6 wavelengths (1270nm~1370nm)
Uncooled operation from-40℃(or-20℃) to +85°C
Designed for Telcordia GR-468
◆ Optical communication
Specializes in high level semiconductor laser diode chips development, production and packaging, focus on both Cloud Data Center and Telecom Networking inter-connectivity...
Guanglong S&T Zone, No.8 High-tech Industry Park Chaoyang Road, Guilin ,Guangxi, China
+86-133-4600-8527
alan.shizz@glsun.com
