High Power DFB SiPh LD Chip
H-xxx-D-xx-B0-D is a directly modulated buried-heterostructure (BH) DFB laser chip for high power light
source application. Its InGaAsP material system coupled with BH platform provides excellent reliability.
Parrameters | Unit | Min. | Max. | |
| Operating Temperature | ℃ | 0 | 75 | |
| Laser Forward Current | mA | -- | 500 | |
| Laser Reverse Bias | V | -- | 2 | |
| Storage Temperature* | ℃ | -40 | 85 | |
Note: *Non condensation on chip. | ||||
| Parameter | Symbol | Test Conditions | Min. | Typical | Max. | Unit |
| Operating Temperature | T | -- | 0 | -- | 75 | ℃ |
| Threshold Current | ITH | CW | -- | 40 | 75 | mA |
| Operating Current | IOP | CW | -- | -- | 450 | mA |
| Optical Output Power | PO | CW,onCOS @75℃&400mA | 70 | -- | -- | mW |
| Forward Voltage | VF | CW,I=IOP | -- | -- | 2.0 | V |
| Linewidth | LW | P=Po | -- | 0.1 | 1 | MHz |
| Relative Intensity Noise | RIN | P=Po | -- | -- | -145 | dB/Hz |
| Center Wavelength | λ | See"CenterWavelength" | nm | |||
| Wavelength Temp Coefficient | dλ/dT | -- | -- | 0.09 | -- | nm/℃ |
| Side Mode Supp Ratio | SMSR | CW, I=Iop | 35 | -- | -- | dB |
| Far field(Vertical) | ɵv | -- | 16 | 19 | 22 | degrees |
| Far field(Horizontal) | ɵh | -- | 19 | 22 | 25 | degrees |
| XX | Unit | Min. | Typical | Max. | |
| 27 | CW, I=Iop,0℃~70℃ | 1265.0 | 1271 | 1277.0 | |
| 29 | CW, I=Iop,0℃~70℃ | 1285.0 | 1291 | 1297.0 | |
| 31 | V | 1305.0 | 1311 | 1317.0 | |
| 33 | CW, I=Iop,0℃~70℃ | 1325.0 | 1331 | 1337.0 | |
Example: E-271-D-XX-B0-D-375-T means electroabsorption modulated laser chip, wavelength 1265nm ~ 1277nm, working temperature 0 to 75℃, Minimum Slope 0.42@25℃, the packing method Chip on tape.
Center wavelength
Optical Output Power
Designed for Telcordia GR-468
◆High power light source
Guanglong S&T Zone, No.8 High-tech Industry Park Chaoyang Road, Guilin ,Guangxi, China 
+86-133-4600-8527 
alan.shizz@glsun.com