CWDM 10G DFB LD Chip-DFB Chip, APD Chip, Optical Switch, Optical Isolator

CWDM 10G DFB LD Chip

D270X10R3/D290X10R3/D310X10R3/D330X10R3/D350X10R3/D370X10R3 Series Products directly are modulated 10Gbps DFB edge emiting laser diode chips with 1270nm, 1290nm, 1310nm, 1330nm, 1350nm, and1370nm wavelength options. Operating temperature range is from - 40°C to +85°C. Product is available as testeddie. All laser chips come from wafers that have been certified using a representative lot of devices that mustachieve an acceptable yield for burn-in.

Bond Pad (W x L)=75umx75um
Chip Dimensions (WxLxH)=220umx200umx95um
Thickness tolerance ± 20um
Lateral Dimension tolerance t 25um

Parrameters	Unit	Min.	Max.
Forward Current(25℃）	mA	--	110
Forward Power(25℃）	mW	--	20
Reverse Voltage	V	--	2
Storage Temperature*	℃	-40	100
Note: *Non condensation on chip.

Parameter	Symbol	Test Conditions	Min.	Typical	Max.	Unit
Operating Temperature	T		Please see the Ordering Information			℃
Threshold Current	I_TH	CW	--	9	14	mA
Threshold Current	I_TH	T=85℃ CW	--	25	30	mA
Optical Output Power	P_O	IF= I_TH+20mA	6	8	--	mW
Optical Output Power	P_O	T=85°C I_TH+20mA	3.6	4.8	--	mW
Slope Efficiency	SE	I_TH+20mA	0.3	0.4		W/A
Slope Efficiency	SE	T=85°C I_TH+20mA	0.18	0.24		W/A
Forward Voltage	V_F	I_F= I_TH+20mA		1.4	1.8	V
Series Resistance	R	I_F= I_TH+20mA		10	14	Ohm
Center Wavelength	λ	I_F=I_TH+20mA T=25℃	See Options	λc	See Options	nm
Wavelength Temp Coefficient	dλ/dT	T=-20℃~+85℃		0.09		nm/℃
Side Mode Supp Ratio	SMSR	I_F=I_TH+20mA	35	40		dB
Rise Time	T_R	unfiltered, 10~90%			60	ps
Fall Time	T_F	unfiltered, 10~90%			60	ps
Far field(Vertical)	ɵ_v	I_F=I_TH+20mA	16	19	22	degrees
Far field(Horizontal)	ɵ_h	I_F=I_TH+20mA	19	22	25	degrees
Small Signal Modulation Bandwidth(3dB）	BW	I_F=I_TH+20mA	9			GHz