2.5G 1490nm DFB LD Chip-DFB Chip, APD Chip, Optical Switch, Optical Isolator

2.5G 1490nm DFB LD Chip

D490X02R1 is a 1490nm directly modulated 2.5Gbs single mode edge-emitling laser diode chip for useinuncooled applications.The designfeatures mull-quantum well (OW)active layers and bui-indistributed. feedback (DFB) grating, All laser chips come from wafers that have boen cerifed using arepresenlalive lot of devices that must achieve an acoeplable yield for burn-in.

Bond Pad (W x L)=75umx75um
Chip Dimensions (WxLxH)=220umx200umx95um
Thickness tolerance ± 15um
Lateral Dimension tolerance ± 25um

Parrameters	Unit	Min.	Max.
Forward Current(25℃）	mA	--	150
Forward Power(25℃）	mW	--	40
Reverse Voltage	V	--	2
Storage Temperature	℃	-40	+100

Parameters at 25°C unless otherwise specified

Parameter	Symbol	Test Conditions	Min.	Typical	Max.	Unit
Operating Temperature	T		Please see the Ordering Information			℃
Threshold Current	I_TH	CW	--	10	14	mA
Threshold Current	I_TH	T=85℃ CW	--		30	mA
Optical Output Power	P_O	IF= I_TH+20mA	6	7	--	mW
Optical Output Power	P_O	T=85°C I_TH+20mA	3.6	4	--	mW
Slope Efficiency	SE	I_TH+20mA	0.3	0.35		W/A
Slope Efficiency	SE	T=85°C I_TH+20mA	0.18	0.2		W/A
Forward Voltage	V_F	I_F= I_TH+20mA			1.6	V
Series Resistance	R	I_F= I_TH+20mA		10	14	Ohm
Center Wavelength	λ	I_F=I_TH+20mA T=25℃	1480	1490	1500	nm
Wavelength Temp Coefficient	dλ/dT	T=-20℃~+85℃		0.09		nm/℃
Side Mode Supp Ratio	SMSR	I_F=I_TH+20mA	35	40		dB
Rise Time	T_R	unfiltered, 10~90%			100	ps
Fall Time	T_F	unfiltered, 10~90%			150	ps
Far field(Vertical)	ɵ_v	I_F=I_TH+20mA		40		degrees
Far field(Horizontal)	ɵ_h	I_F=I_TH+20mA		25		degrees
Small Signal Modulation Bandwidth(3dB）	BW	I_F=I_TH+20mA	9			GHz