10G 1270~1370nm DFB EML Chip-DFB Chip, APD Chip, Optical Switch, Optical Isolator

10G 1270~1370nm DFB EML Chip

D270X10R3/ D290X10R3/ D310X10R3/ D330X10R3/ D350X10R3/ D370X10R3 Series Products are directly modulated 10Gbps DFB edge emitting laser diode chips with 1270nm, 1290nm, 1310nm, 1330nm, 1350nm, and 1370nm wavelength options.

Parrameters	Unit	Min.	Max.
Operating Temperature	℃	-20 & -40	85
Laser Forward Current	mA	--	120
Laser Reverse Bias	V	--	2
Storage Temperature*	℃	-40	100
Note: *Non condensation on chip.

Parameter	Symbol	Test Conditions	Min.	Typical	Max.	Unit
Operating Temperature	T	--	See Options	--	85	℃
Threshold Current	I_TH	T=25℃	--	5	10	mA
Threshold Current	I_TH	T=85℃	--	25	40	mA
Operating Current	I_OP	CW,T=25°C	30	--	--	mA
Optical Output Power	P_O	CW	7	--	--	mW
Slope Efficiency	SE	T=25°C	0.35	0.5	--	mW/mA
Forward Voltage	V_F	I_OP= I_TH+20mA	--	1.1	1.6	V
Center Wavelength	λc	CW,T=25°C	See Option	1270 1290 1310 1330 1350 1370	See Options	nm
Wavelength Temp Coefficient	dλ/dT	--	--	0.09	0.1	nm/℃
SpectralWidth(-20dB)	d_λ	--		0.1	1.0	nm
SideModeSuppRatio	SMSR	I_OP	40	45	--	dB
Rise Time	T_R	I_OP, 20% to 80%	--	50	--	ps
Fall Time	T_F	I_OP, 20% to 80%	--	50	--	ps
Far field(Vertical)	ɵ_v	--	16	19	22	degrees
Far field(Horizontal)	ɵ_h	--	19	22	25	degrees
Bandwidth	BW	T=25°C, EO3-dB bandwidthat I_OP	8	10	--	GHz

图片关键词

Example: E-270-A-02-R3-B-350-T means electroabsorption modulated laser chip, wavelength1267nm~1273nm, 10Gbs, working temperature -40'C to 85'℃, Minimum Slope 0.35@25°℃, thepacking method Chip on tape.